高速元件實驗室

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鄭岫盈

 

職稱： 教授

研究專長： 微電工程

電子郵件： sycheng@niu.edu.tw

聯絡電話： (03)9357400 ext.7332

 

 

研究計劃

具最佳化步階式結構之銦錫氧化物探討(行政院國家科學委員會)

2013-08-01～2014-07-31

砷化鋁鎵/砷化銦鎵/砷化鎵變晶性高電子遷移率電晶體之研製(行政院國家科學委員會)

2012-08-01～2013-07-31

砷化鎵系列雙極性-場效電晶體之研製(行政院國家科學委員會)

2011-08-01～2012-07-31

具砷化銦鋁極集層結構之磷化銦/砷化銦鎵異質接面雙極性電晶體(行政院國家科學委員會 )

2009-08-01～2010-07-31

具非退火式的歐姆接觸之改良型砷化銦鋁/砷化銦鎵變晶性高電子移動率電晶體(行政院國家科學委員會)

2008-08-01～2009-07-31

具歐姆掘入結構之改良式變晶性異質結構場效電晶體元件(I)(行政院國家科學委員會)

2007-08-01～2008-10-31

期刊論文 (Journal Papers)

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  1. Wei-Cheng Chen, Jing-Shiuan Niu, I-Ping Liu, Hong-Yu Chen, Shiou-Ying Cheng, Kun-Wei Lin, Wen-Chau Liu, (2021) "Hydrogen sensing properties of a novel GaN/AlGaN Schottky diode decorated with palladium nanoparticles and a platinum thin film, Sensors and Actuators B: Chemical, Volume(Volume 330, 1 March 2021), p0~0.
  2. Wei-Cheng Chen, Jing-Shiuan Niu, I-Ping Liu, Bu-Yuan Ke, Wen-Chau Liu, (2021) "Hydrogen sensing properties of a GaN/AlGaN-based Schottky diode with a catalytic platinum (Pt) hybrid structure, Sensors and Actuators B: Chemical, Volume(Volume 331, 15 March 2021,), p0~0.
  3. WC Chen, JS Niu, IP Liu, BY Ke, SY Cheng, WC Liu, (2021) "Study of a GaN-Based Light-Emitting Diode with a Specific Hybrid Structure, ECS Journal of Solid State Science and Technology, Volume(10 (4), 045001), p129320~129322.
  4. C H Chang, , (2020) "Ammonia Sensing Characteristics of a Platinum (Pt) Hybrid Structure/GaN-Based Schottky Diode, IEEE Transactions on Electron Devices , Volume(67 (1), 296-303), p0~0.
  5. Ching-Hong Chang, Tzu-Chieh Chou, Wei-Cheng Chen, Jing-Shiuan Niu, Kun-Wei Lin, and Wen-Chau Liu,, (2020) "A Highly Sensitive Ammonia (NH3) Sensor Based on a Tungsten Trioxide (WO3) Thin Film Decorated With Evaporated Platinum (Pt) Nanoparticles (NPs), IEEE Trans. Device, accepted , Volume(vol.67, No.3, 2020.), p1176~1182.
  6. Ching-Hong Chang, Tzu-Chieh Chou, Wei-Cheng Chen, Jing-Shiuan Niu, Kun-Wei Lin,Jung-Hui Tsai, Wen-Chau Liu, (2020) "Study of a WO3 thin film based hydrogen gas sensor decorated with platinum nanoparticles, Sensors and Actuators B: Chemical, Volume(Volume 317, 15 August 2020, 12), p0~0.
  7. Wei-Cheng Chen, , (2020) "Study of a Palladium (Pd)/Aluminum-Doped Zinc Oxide (AZO) Hydrogen Sensor and the Kalman Algorithm for Internet of Things (IoT) Application, IEEE Transactions on Electron Devices, Volume(), p0~0.
  8. Chi-Hsiang Hsu, , (2017) "Study of GaN-Based LEDs With Hybrid SiO2 Microsphere/Nanosphere AntiReflection Coating as a Passivation Layer by a Rapid Convection Deposition, IEEE Trans. Electron Dev, Volume(), p~.
  9. Chi-Shiang Hsu, , (2017) "Performance Enhancement of GaN-Based Light-Emitting Diodes by Using Transparent Ag Metal Line Patterns, IEEE Trans. Electron Dev., Volume(), p~.
  10. Jian-Kai Liou, , (2014) "Improved Current Spreading Performance of a GaN-Based Light-Emitting, Solid-State Electron, Volume(), p~.
  11. Jian-Kai Liou, , (2013) " Effects of the Use of an Aluminum Reflecting and an SiO2 Insulating Layers (RIL) on the Performance of a GaN-Based Light-Emitting Diode With the Naturally Textured p-GaN Surface, IEEE Trans. Electron Devices, Volume(), p~.
  12. Kuei-Yi Chu, , (2012) "Characteristics of InGaP/InGaAs Pseudomorphic High Electron Mobility Transistors (PHEMTs) with Triple Delta-Doped Sheets, Semiconductors, Volume(), p~.
  13. Kuei-Yi Chu, , (2012) "Comprehensive study of InGaP/InGaAs/GaAs Dual Channel Pseudomorphic High Electron Mobility Transistors, Solid-State Electron, Volume(), p~.
  14. Yi-Jung Liu, , (2011) "Improved current-spreading performance of an InGaN-based light-emitting diode with a clear p-GaN/n-GaN barrier junction, Displays, Volume(), p~.
  15. Yi-Jung Liu, , (2011) "Investigation of GaN-Based Light-Emitting Diodes Grown on Vicinal Sapphire Substrates, Physica Status Solidi, Volume(), p~.
  16. Kuei-Yi Chu, , (2011) "Effect of graded triple delta-doped sheets on the performance of GaAs based dual channel pseudomorphic high electron mobility transistors, Superlattices & Microstructures, Volume(), p~.
  17. Chien Chang Huang, , (2011) "Performance of a GaAs-Based Pseudomorphic High Electron Mobility Transistor (PHEMT) with an Electroless-Plated Treated Gate, Materials Science Forum, Volume(), p~.
  18. Chien-Chang Huang, , (2011) "On the Characteristics of an Electroless Plated (EP)-Based Pseudomorphic High Electron Mobility Transistor (PHEMT), Solid-State Electron, Volume(), p~.
  19. Jian Kai Liou, , (2011) "Performance on GaN-Based Light-Emitting Diodes with Different Substrate Tilt Angles, Materials Science Forum, Volume(), p~.
  20. Yi-Jung Liu, , (2010) "Improved performance of GaN-based light-emitting diodes by using short-period superlattice structures, Prog. Nat. Sci., Volume(), p~.
  21. Li-Yang Chen, , (2010) "Thermal-stability performance of a metamorphic high electron mobility transistor (MHEMT) with non-annealed Ohmic contacts, Solid-State Electron, Volume(), p~.
  22. Li-Yang Chen, , (2010) "Performance of a GaAs based pseudomorphic transistor with electroless-plated surface treated gate, J. Electrochem. Soc., Volume(), p~.
  23. Li-Yang Chen, , (2009) "Characteristics of an electroless plated-gate transistor, Appl. Phys. Lett., Volume(), p~.
  24. Li-Yang Chen, , (2009) "Temperature-Dependent Characteristics of a Low-Temperature Deposition Approach on a Pseudomorphic High Electron Mobility Transistor, Electrochem. Solid State Lett., Volume(), p~.
  25. Li-Yang Chen, , (2009) "On the pseudomorphic high electron mobility transistors (PHEMTs) with a low-temperature gate approach, IEEE Electron Device Lett., Volume(), p~.
  26. Tzu-Pin Chen, , (2009) "Comparative Study of InGaP/GaAs Heterojunction Bipolar Transistors (HBTs) with Different Base Surface Treatments, Superlattice and Microstructures, Volume(), p~.
  27. Tzu-Pin Chen, , (2009) "Effect of emitter ledge thickness on InGaP/GaAs heterojunction bipolar transistor. Electrochem. and Solid-State Letters, Electrochem. and Solid-State Letters, Volume(), p~.
  28. 鄭岫盈, Kuei-Yi Chu、Li-Yang Chen、Lu-An Chen、Wen-Chau Liu, (2008) "Characteristics of an InGaP/AlxGa1-xAs/GaAs composite-emitter heterojunction bipolar transistor (CEHBT), J.Vac.Sci.& Technol.B, Volume(第26卷2期), p~.
  29. 鄭岫盈, Ssu-I Fu、Kuei-Yi Chu、Tzu-Pin Chen、Wen-Chau Liu、Li-Yang Chen, (2008) "Improved performances of a two-step passivated heterojunction bipolar transistor, Microelectronics Reliability, Volume(第48卷), p~.
  30. 鄭岫盈, Kuei-Yi Chu, (2007) "Two-dimensional analysis for emitter ledge thickness of InGaP/GaAs heterojunction bipolar transistors, Appl. Phys. Lett., Volume(第90卷4期), p~.
  31. 鄭岫盈, Kuei-Yi Chu, (2007) "Temperature-Dependent DC Characteristics of InGaP/GaAs Heterojunction Bipolar Transistors (HBTs) with Different Passivation, J. Electrochem. Soc., Volume(第154卷), p~.
  32. 鄭岫盈, , (2007) "Very wide current-regime operation of an InP/InGaAs tunneling emitter bipolar transistor (TEBT), Microelectronics Reliability, Volume(第47卷), p~.
  33. 鄭岫盈, Wen-Chau Liu, (2007) "Improved Performance of a Dual-Passivated Heterojunction Bipolar Transistor, J. Vac. Sci. & Technol. B, Volume(第25卷3期), p~.
  34. 鄭岫盈, Ssu-I Fu、Kuei-Yi Chu、Tzu-Pin Chen、Wen-Chau Liu、Li-Yang Chen, (2006) "Improved performances of a two-step passivated heterojunction bipolar transistor, Microelectronics Reliability, Volume(48:200-203), p~.
  35. 鄭岫盈, Ssu-I Fu、Tzu-Pin Chen、Po-Hsien Lai、Rong-Chau Liu、Kuei-Yi Chu、Li-Yang Chen、Wen-Chau Liu, (2006) "The Effect of Sulfur Treatment on the Temperature-Dependent Performance of InGaP/GaAs Heterojunction Bipolar Transistors, IEEE Trans. on Device and Materials Reliabilit, Volume(第6卷), p~.
  36. 鄭岫盈, , (2006) "Very wide current-regime operation of an InP/InGaAs tunneling emitter bipolar transistor (TEBT), Microelectronics Reliability, Volume(47:1208-1212), p~.
  37. 鄭岫盈, Ssu-I Fu、Kuei-Yi Chu、Po-Hsien Lai、Li-Yang Chen、Wen-Chau Liu、江孟學, (2006) "Improved DC and microwave performance of heterojunction bipolar transistors by full sulfur passivation, J. Vac. Sci. & Technol., Volume(第B24卷2期), p~.
  38. 鄭岫盈, Kuei-Yi Chu, and Li-Yang Chen, (2006) "An Novel InGaP/ AlXGa1-XAs /GaAs Composite-Emitter Heterojunction Bipolar Transistor (CEHBT), IEEE Electron Device Lett., Volume(第27卷), p~.
  39. S.-Y. Cheng, Chun-Yuan Chen、Jing-Yuh Chen、Wen-Chau Liu、Wen-Lung Chang、Meng-Hsueh Chiang, (2005) "Comprehensive studies of InGaP/GaAs heterojunction bipolar transistors with different thickness of setback layers, Superlattice and Microstructures, Volume(第37卷), p~.
  40. 鄭岫盈, Chun-Yuan Chen、Ssu-I Fu、Po-Hsien Lai、Yan-Ying Tsai、Wen-Chau Liu, (2005) "DC Characterization of an InP/InGaAs Tunneling Emitter Bipolar Transistor (TEBT), Jpn. J. Appl. Phys., Volume(第44卷2期), p~.
  41. 鄭岫盈, Jing-Yuh Chen, Chun-Yuan Chen, Hung-Ming Chuang, Chih-Hung Yen, Kuan-Ming Lee, Wen-Chau Liu, (2004) "Comprehensive study of InGaP/ AlXGa1-XAs /GaAs heterojunction bipolar transistors (HBTs) with different doping concentrations of AlXGa1-XAs graded layers, Semicond. Sci. Technol., Volume(第19卷), p~.
  42. 鄭岫盈, , (2004) "Analysis of Improved DC and AC Performances of an InGaP/GaAs Heterojunction Bipolar Transistor with a Graded AlxGa1-xAs Layer at Emitter/Base Heterojunction, Solid-State Electron, Volume(第48卷7期), p~.
  43. 鄭岫盈, Chun-Yuan Chen、Jing-Yuh Chen、Hung-Ming Chuang、Chih-Hung Yen、Wen-Chau Liu, (2004) "Comprehensive Study of InGaP/ AlXGa1-XAs /GaAs Composite-Emitter Heterojunction Bipolar Transistors (CEHBTs) with Different Thickness of AlXGa1-XAs Graded Layers, Journal of Vacuum Science & Technology, Volume(第B22卷4期), p~.
  44. 鄭岫盈, , (2003) "An InGaP/AlGaAs/GaAs heterojunction bipolar transistor with zero conduction-band discontinuity, Superlattice and Microstructures, Volume(第33卷), p~.
  45. 鄭岫盈, , (2003) "A Hydrogen Sensitive Pd/GaAs Schottky Diode Sensor, Mat. Chem. Phys., Volume(第78卷), p~.
  46. 鄭岫盈, , (2002) "Theoretically investigation of an InGaP/GaAs Heterostructure-Emitter Bipolar Transistor (HEBT) with a Wide-gap Collector, Semicond. Sci. Technol., Volume(第17卷), p~.
  47. 鄭岫盈, , (2002) "Comprehensive study of an InGaP/AlGaAs/GaAs heterojunction bipolar transistor (HBT) with a continuous conduction-band structure, Semicond. Sci. Technol., Volume(第17卷), p~.

會議論文 (Conference Papers)

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  1. Cho-Yen Lo, Yu-Wei Chao, "Comprehensive Studies of Floating Field Ring with Different Ring Depth", Global Engineering & Applied Science Conference 2018, 2018.
  2. Yu-Wei Cha, Cho-Yen Lo, "A Study of Charge Imbalanced for Super Junction Diode", Global Engineering & Applied Science Conference 2018, 2018.
  3. Ching-Hong Chang, , "An AlGaN/GaN High Electron Mobility Transistor (HEMT) with Composite AlGaOx and SiO2 Dielectric Layers", 2017 SCET (Material Sciences and Technology: Technical Session II), Chengdu, China, 2017.
  4. Wei-Cheng Chen, , "Room-temperature (RT) Hydrogen Sensing Performance of AlGaN/GaN Heterostructure-based Schottky Diodes", 2017 SCET (Material Sciences and Technology: Technical Session II), Chengdu, China, 2017.
  5. Chun-Chia Chen, , "An electrophoretic deposition (EPD)-gate approach for a heterostructure field effect transistor (HFET)", 2015 ICEAI (poster session), Kyoto, 2015.
  6. Jian-Kai Liou, , "On a high-power GaN-based light-emitting diode with a nano-hemispherical hybrid backside reflector", 2015 ICEAI (poster session), Kyoto, 2015.
  7. YC Huang, MH Chiang, "6-T SRAM performance assessment with stacked silicon nanowire MOSFETs", Sixteenth International Symposium on Quality Electronic Design, 2015.
  8. Jian-Kai Liou, , "Improved Performance of a High-Power GaN-Based Light-Emitting Diode with a SiO2 Nanosphere Based ConcaveShape Aluminum Backside Metal Mirro", 2014 ICEAS, Sapporo, 2014.
  9. Chun-Chia Chen, , "A Pd/AlGaN/GaN Heterostructure FieldEffect Transistor (HFET)-Type Hydrogen Gas Sensor with an Electroless Plating (EP)-Gate", E-MRS 2013 Spring Meeting, Strasburg, France, 2013.
  10. Jian-Kai Liou, , "Performance of a GaN-Based Light-Emitting Diode with an Inserted Aluminum Reflector Deposited on the Naturally-Textured p-GaN Surface", E-MRS 2013 Spring Meeting, Strasburg, France, 2013.
  11. 鄭岫盈, , "An InGaP/AlxGa1-xAs/GaAs Composite-Emitter Heterojunction Bipolar Transistors (CEHBTs)", 第十二屆三軍官校基礎學術研討會, 高雄, 2005.
  12. 鄭岫盈, , "An InGaP/AlXGa1-XAs/GaAs heterojunction bipolar transistors (HBTs) with different doping concentrations of AlXGa1-XAs graded layers", EDMS’05, Kaohsiung, Taiwan, R.O.C., 2005.
  13. 鄭岫盈, , "Influence of AlXGa1-XAs Graded Layer on the Performance of InGaP/ AlXGa1-XAs /GaAs Composite-Emitter Heterojunction Bipolar Transistors (CEHBTs)", EDMS’04, 2004.
  14. 鄭岫盈, , "Numerical and Experimental Analysis of an InP/InGaAs Tunneling Emitter Bipolar Transistor (TEBT) for Low-Voltage and Low-Power Circuit Applications", IVESC2004, 2004.
  15. 鄭岫盈, , "Simulation of an InGaP/GaAs Heterostructure-Emitter Bipolar Transistor (HEBT) with a Wide Bandgap Collector", Proc. the Ninth Military Symposium on Fundamental Science, Kaohsiung, Taiwan, R.O.C., 2002.
  16. 鄭岫盈, , "An InGaP/AlGaAs/GaAs heterojunction bipolar transistor with zero conduction-band discontinuity", ICSNN’2002. Toulouse, France, 2002.
  17. 鄭岫盈, , "Simulation study of the DC and AC characteristics of an improved InGaP/GaAs heterostructure-emitter bipolar transistor (HEBT) with an InGaP wide bandgap collector", Command Abstr. Int. Conf. Optoelectronic and Microelectronic and Devices COMMAD’02, abstract141, Sydney, Australia, 2002.
  18. 鄭岫盈, , "An InGaP/GaAs heterojunction bipolar transistor with the optimized setback-layer thickness", ICPS, D. P. 235 Edinburgh, UK, 2002.
  19. 鄭岫盈, , "Performance of an InGaP/AlGaAs/GaAs heterojunction bipolar transistor (HBT) with a fully continuous conduction band", EDMS’02, Taipei, Taiwan, R.O.C., 2002.
  20. 鄭岫盈, , "Simulation of an InGaP/GaAs Heterostructure-Emitter Bipolar Transistor (HEBT) with a Wide Bandgap Collector", EDMS’01, Kaohsiung, Taiwan, R.O.C., 2001.
  21. 鄭岫盈, , "Impulse-Like Negative-Differential-Resistance of Superlatticed Resonant-Tunneling Transistor", EDMS’01, Kaohsiung, Taiwan, R.O.C., 2001.